KMY20M1磁阻傳感器

Magnetic Field Sensors
KMZ 20 M1
Function principle
Magnetoresistive materials can change their resistivity in an external magnetic field. The
variation of the resistivity is determined by the rotation of magnetisation with respect to the
direction of the current flow. Permalloy (Ni Fe ) is commercially used as
81 19
magnetoresistive material. The relative change of resistivity is 2-3 % for this material. The
high sensitive and small size magnetoresistive sensor consists of the chip 174B covered
with thin film permalloy stripes. These stripes form a Wheatstone bridge, whose output
voltage is proportional to the magnetic field component H .
y
Characteristic
The bridge imbalance is a value for the magnetic field component H in the plane of the
y
chip. It is of advantage to apply an auxiliary field H = 3 kA/m which avoids flipping of the
x
magnetisation of the stripes caused by disturbing magnetic fields. A perpendicular field H
x
is necessary to stabilize sensor operation. This can be done by using a small permanent
magnet. Magnetic fields vertical to the chip surface have no influence on the output
voltage.
Special feature
The sensor KMZ 20 M1 has a small permanent magnet which is glued on the package.
The sensor is ready to use. No external auxillary fields are required for safe operation in a
disturbing field up to 30 kA/m.
Sensors in thin film technology
HL-Planartechnik GmbH
Hauert 13, D - 44 227 Dortmund, Tel.: +49 (0) 231/97400, Fax.: +49 (0) 231/974020
Internet: http://www.hlplanar.com E-Mail: service@hlplanar.deMagnetic Field Sensors
KMZ 20 M1
Technical data
Absolute maximum ratings Applications
Parameter Symbol Unit Value - detection of weak magnetic fields,
e.g. earth magnetic field
- contactless mechanical switch
Supply voltage VB V 12
- displacement measurement with
Total power dissipation Pto mW 120
high resolution
Operating temperature range Tamb °C -40 ... + 125 - revolution speed detection
Storage temperature range Tstg °C -65 ... +150 on ferromagnetic gear wheels
Disturbing field Hd kA/m ≤ 30 -
-
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measurement
Electrical characteristics (T
amb
= 25°C)
U
0
[mV/V]
H x = 3 kA/m
Parameter Symbol Unit Value 8
6
Bridge resistance RB kOhm 1.4 .. 2.2
Open circuit sensitivity SV (mV/V)/(kA/m) 4.0 ± 0.8 4 H x = 1 kA/m
Output voltage range ?VO /VB mV/V 20.0 ± 4.0
2
Hysteresis of output voltage VO H /VB μV/V ≤ 50
O Peff rs me at nvo el nta t g ae u xiliary field VOFF /V HB x m kAV // mV 3≤ .6 ± ± 1 0.0 .4 -4 -3 -2 -1 -2 1 2 3 H y [kA/4 m]
-4
Temperature coefficients ( - 25 °C < T < 125 °C)
amb -6
of
Parameter Symbol Unit Value -8
Bridge resistance TCBR %/K 0.30 ± 0.05 Output voltage versus field component Hy
Open circuit sensitivity
for different stabilizing magnetic fields Hx
(VB = const) TCSV %/K -0.25 ± 0.05
(IB = const) TCSI %/K 0.05 ± 0.05
Offset voltage TCOFF (μV/V)/K ≤ ± 3
Difference of offset voltage ?TCOFF (μV/V)/K ≤ ± 0.5
for sensor pair
H ousing of KMZ 20 M: 2 KMZ 20 M1
E -Line 4-Pin
We also offer selected pairs of
1: +V o 3: -V o KMZ 20 M1. These pairs have a
2: - V B 4: +V B similar temperature characteristic
of the voltage offset and are well
V o : output voltage suited for differential measuring
V B : input voltage techniques. The temperature drift
of the magnetoresistive sensor is
strongly reduced by applying this
technique.
metric dimensions
Sensors in thin film technology
HL-Planartechnik GmbH
Hauert 13, D - 44 227 Dortmund, Tel.: +49 (0) 231/97400, Fax.: +49 (0) 231/974020
Internet: http://www.hlplanar.com E-Mail: service@hlplanar.de

KMY20M1是一種特定型號的磁阻傳感器（MR Sensor），它屬于磁敏電阻的一種。該產品由一家名為KMY（具體公司未在標題中提及，可能是某家專注于磁性傳感器開發(fā)和生產的制造商）的公司所生產。其型號"20M1"可能代表了以下含義： - "20"：這可能是該系列產品的代號或者是工作頻率、測量范圍、靈敏度等相關參數的簡寫，具體含義需要查閱相關技術規(guī)格書。 - "M1"：通常用于區(qū)分同一類型的不同版本或配置，M可能表示“基本”、“模塊化”或者某種功能級別。 磁阻傳感器的工作原理是基于磁阻效應，即當通過材料的電流方向與磁場方向不平行時，材料的電阻會發(fā)生變化，從而實現對磁場強度、方向等物理量的非接觸式檢測。KMY20M1磁阻傳感器可能應用于汽車電子、工業(yè)自動化、消費電子、物聯(lián)網等領域中的速度、位置、角度、振動等磁性感應應用。為了獲取更詳細的信息，如工作原理、尺寸、精度等級、封裝形式以及應用環(huán)境要求等，需參閱KMY公司提供的官方數據手冊和技術規(guī)格說明。